Тensoresistance as a Source of Information about Anisotropy Parameter of Mobility <i>K = μ<sub>⊥</sub>/μ<sub>||</sub></i> in Many-valley Semiconductors and Some New Features of Deformation Metrology
Vol. 51 Nr. 2 (2015), Conținut
Vol. 51 Nr. 2 (2015)

Тensoresistance as a Source of Information about Anisotropy Parameter of Mobility <i>K = μ<sub>⊥</sub>/μ<sub>||</sub></i> in Many-valley Semiconductors and Some New Features of Deformation Metrology

  • Gaidar G.P.
Gaidar G.P.

Rezumat

CZU 621.315.592

 

In the many‑valley weakly doped semiconductor single crystals n‑Ge and n‑Si the anisotropy of mobility of majority charge carriers at Т = 77.4K was investigated and under these conditions the values of the anisotropy parameter of mobility were obtained: K = μ⊥/μ|| = 15.6 – in n‑Ge and K = 5.89 – in n‑Si.

 

Keywords: silicon, germanium, tensoresistance, the anisotropy parameter of mobility.

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