Abstract
UDC 621.315.592
In the many‑valley weakly doped semiconductor single crystals n‑Ge and n‑Si the anisotropy of mobility of majority charge carriers at Т = 77.4K was investigated and under these conditions the values of the anisotropy parameter of mobility were obtained: K = μ⊥/μ|| = 15.6 – in n‑Ge and K = 5.89 – in n‑Si.
Keywords: silicon, germanium, tensoresistance, the anisotropy parameter of mobility.