ВЛИЯНИЕ МИКРОГЕТЕРОПЕРЕХОДОВ КРЕМНИЙ–ГЕРМАНИЙ НА ПАРАМЕТРЫ КРЕМНИЕВЫХ СОЛНЕЧНЫХ ЭЛЕМЕНТОВ

Аннотация

It is established, that annealing at 850 °C the monocrystal silicon doped with germanium, reduce to the formation internal microheterojunctions Si/SiGe/Si, which enhancement of efficiency to 2,5 % of solar cells made on its basis.

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