Rezumat
CZU 621.315.592
DOI https://doi.org/10.52577/eom.2026.62.1.62
The paper deals with the process of obtaining silicon samples diffusion-doped with impurity manganese atoms with different crystallographic directions. The aim of the research was to investigate the influence of diffusion doping of impurity manganese atoms on physicochemical and tenso-properties of silicon, as well as to obtain silicon samples with crystallographic directions {111}, {110}, and {100}. The main technological modes of diffusion of manganese atoms in silicon at different temperatures and from the crystallographic direction, which affect the distribution of impurity manganese atoms in the crystal lattice, have been determined. Experimental data confirm that the direction of the crystal lattice has a significant influence on the doping efficiency and characteristics of the obtained materials. The results of the work can be useful for the development of new semiconductor materials in which the electrophysical parameters strongly depend on the crystal direction of the orientation axis.
Keywords: silicon, manganese, diffusion, crystal direction, impurity, microscope.