Influence of Thermoannealing and Cooling Conditions of <i>n</i>-Si<P> Crystals on the Temperature Dependences of Charge Carrier Mobility in the Region of the Impurity Scattering
Vol. 49 Nr. 6 (2013), Conținut
Vol. 49 Nr. 6 (2013)

Influence of Thermoannealing and Cooling Conditions of <i>n</i>-Si<P> Crystals on the Temperature Dependences of Charge Carrier Mobility in the Region of the Impurity Scattering

  • Gaidar G.P.
Gaidar G.P.

Rezumat

CZU 621.315.592

 

The changes of temperature dependences of charge carrier mobility in n‑Si<P> single crystals, grown by the Czochralski method, annealed and cooled under various conditions, have been investigated. The crystals with resistivities r300K = 0.3 and 4.4 Ohm×cm have been annealed at 1200 and 500oC, during 2 hours. The annealing has been accompanied by fast (~ 1000oC/min) or slow (~ 1oC/min) cooling. The mobility of free carriers in the case of impurity scattering is shown to be determined not only by thermal-annealing conditions but also by the rate of cooling.

 

Keywords: silicon, impurity scattering, charge carrier mobility, thermal-annealing, conditions of cooling.

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