Rezumat
The kinetics of the silicon nitride deposition by ammonolysis of dichlorosilane and the stoichiometry of the films deposited in the temperature range 720 850C with a value of an am- monia flow-dichlorosilane ratio in the range of 3 to 15 and pressure 20 to 133 Pa is discussed. It is found that in the explored range of T, P, the films are stoichiometric silicon nitride with retractive index 1,95 ± 0,05 and density 2,72 to 3,11g/cm3. The mechanism explaining the variable nature of deposition rate- relations in the area of relatively small and large flows of dichlorosilane is pro- posed. The obtained results were used to optimize the procedure of capacitor silicon nitride deposi- tion for non-power electronics.