Abstract
UDC 621.315.592
DOI https://doi.org/10.52577/eom.2026.62.2.61
The thermodynamic conditions for obtaining silicon with nanoclusters of selenium impurity atoms, without surface erosion and with the specified electrophysical parameters, are described. The possibilities of producing silicon samples containing selenium nanoclusters by controlling the vapor pressure of the diffusant are demonstrated. It has been established that the concentration and size of the formed nanoclusters of impurity atoms in silicon depend on the thermodynamic conditions and the diffusion process parameters. It is shown that selenium impurity atoms in silicon form nanoclusters consisting of four or six atoms, which significantly affects the electrophysical and photoelectric properties of silicon. The potential application of silicon samples doped with selenium impurity atoms for the development of semiconductor devices with thermally stable and radiation-resistant characteristics is demonstrated.
Keywords: silicon, semiconductor, impurity, selenium, temperature, nanocluster, diffusion.