Devices on Base of TlIn<sub>1‑x</sub>Pr<sub>x</sub>Se<sub>2</sub> Crystals for Multipoint Tensometry
Vol. 49 No. 6 (2013), Content
Vol. 49 No. 6 (2013)

Devices on Base of TlIn<sub>1‑x</sub>Pr<sub>x</sub>Se<sub>2</sub> Crystals for Multipoint Tensometry

  • Mamedov G.A.
  • Gojayev E.M.
  • Gulmamedov K.D.
  • Dadashev M.T.
  • Rustamov V.D.
Mamedov G.A.
Gojayev E.M.
Gulmamedov K.D.
Dadashev M.T.
Rustamov V.D.

Abstract

UDC 537.226.621.315 

 

The given work presents the devices on the base of new TlIn1-xPrxSe2 (0 ≤ x ≤ 0.04) crystals developed to be used in high temperature multipoint tensometry, which allows for raising productivity and reliability of results of measurements at multipoint tensometry.

 

Keywords: multipoint tensometry, photoelectric properties, directional strain, acoustic probe.

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