ФОТОЭЛЕКТРИЧЕСКИЕ СТРУКТУРЫ НА ОСНОВЕ НАНОПОРИСТОГО p-InP

Abstract

The possibility for nanostructuring of surfaces of indium phosphide with hole conductivity is confirmed. The technique of manufacturing and research of SnO2/InP heterostructures with nanoporous morphology at interface is developed. It is shown, that the investigated structure can form the basis for working out of photovoltaic devices with enhanced active surface.

article_1 (Русский)