Abstract
The presented results of the study of the processes of the shaping superthin film СoSi2 on surfaces Si (100) by methods MLE, TFE and RE. The Explored regularities of the initial stage of the growing of the film СoSi2. It is offered stekhiometry of film СoSi2 by method Oje – electronic spectroscopy. The results of in- vestigation point to strong dependency morphological and electro-physical properties of structures СoSi2/Si (100) from conditions of the growing. The measurements of the surface resistance factors that resistance film СoSi2 growen under T>6000c, little are changed for miscellaneous mode growing.