THE IMPACT OF HIGH ENERGY ION IRRADIATION UPON CO GAS SENSITIVITY OF NANOSTRUCTURED GAN EPILAYERS
Vol. 46 No. 6 (2010), Content
Vol. 46 No. 6 (2010)

THE IMPACT OF HIGH ENERGY ION IRRADIATION UPON CO GAS SENSITIVITY OF NANOSTRUCTURED GAN EPILAYERS

O.S. Volciuc
Department of High-Frequency Electronics, Technical University Darmstadt, Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany, National Center for Materials Study and Testing, Technical University of Moldova, Stefan cel Mare 168, MD-2004 Chisinau, Republic of Moldova
V. Popa
Department of High-Frequency Electronics, Technical University Darmstadt, Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany, National Center for Materials Study and Testing, Technical University of Moldova, Stefan cel Mare 168, MD-2004 Chisinau, Republic of Moldova
I. M. Tiginyanu
National Center for Materials Study and Testing, Technical University of Moldova, Stefan cel Mare 168, MD-2004 Chisinau, Republic of Moldova, Laboratory of Nanotechnology, Institute of Electronic Engineering and Nanotechnologies, Academy 3/3, MD-2028 Chisinau, Republic of Moldova
V. A. Skuratov
Flerov Laboratory of Nuclear Reactions, Joint Institute for Nuclear Research, Joliot Curie str. 6, 141980 Dubna, Moscow region, Russia * lesichin@yahoo.com
M. Cho
Department of High-Frequency Electronics, Technical University Darmstadt, Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany
D. Pavlidis
Department of High-Frequency Electronics, Technical University Darmstadt, Darmstadt, Merckstr. 25, 64283 Darmstadt, Germany

Abstract

Photoelectrochemically nanostructured GaN epilayers were found to exhibit good sensitivity towards CO in the temperature range from 180 to 280°C. We show that subjection of nanostructured GaN samples to 166 MeV Xe+23 ion irradiation causes considerable reduction of the gas sensitivity, while post-irradiation rapid thermal annealing results in sensitivity restoration, the effect being dependent upon the dose of irradiation and annealing temperature. A 50 % restoration of the relative sensitivity is demonstrated after rapid thermal annealing for 1 min at 800°C in samples irradiated by Xe+23 ions at a dose of 1012 cm-2.

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