Аннотация
In this work the methodology of getting thin layers on the basis of Ge1-xSix was used. The thin layers formation speed is in 1 Å/c 1000 Å/c. The ability of the quasi – amorphous condition of thin layers on the basis of Ge0,85Si0,15 (h∼100nm) to stay up to 565 K temperature was determined. It has been experimentally established that electron irradiation with stress leads to accelerated crystallization in the film and decrease of electro conductivity.