Аннотация
Compensated silicon Si<B,Mn>, Si<B,Co>, Si<B,Cr> with different compensation degrel was re- ceived using diffusion doping with Mn, Co and Cr. Surface and volume conductivity was investigated so as concentration and charge current mobility, their distribution profile. It was stated that irrespective of the orig- inal silicon conductivity type the conductivity of presurface layer with definite thick was hole-type with car-
riers concentration ^ 1021 cm3 . Contradiction between hole properties Mn, Co, Cr and the hole character of presurface layer conductivity, so as between value of solubility Mn, Co, Cr in silicon and concentration of these elements near surface is explained by cilicides metals formation in the presurface area of doped silicon.