ИССЛЕДОВАНИЕ КИНЕТИКИ РОСТА ДВУОКИСИ КРЕМНИЯ С УЧЕТОМ ПЕРВИЧНОГО ВЗАИМОДЕЙСТВИЯ КИСЛОРОДА С ПОВЕРХНОСТЬЮ ПОЛУПРОВОДНИКА

Аннотация

The data on interaction of silicon surface with dry oxygen are reported. The mathematical equation for the description of oxidation kinetics of silicon surface in the dry oxygen taking into account desorption of particles on the silicon surface is proposed.

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