Аннотация
The results of technological tests of the designed and manufactured discharge device intended for a plasma etching of materials used in microelectronic fabrication are presented. The main feature of the process, realized in that device, is a controllable action on a material surface by chemically active particles, formed in a combined (microwave and low frequency fields) discharge. The experimental results demon- strated high quantitative and qualitative performances of processes of removing materials (in particular etching of monocrystalline silicon) in the designed discharge device.