TENSO-HALL EFFECT IN COMPENSATED SILICON

Аннотация

The Hall effect" for unaxial compression at temperature 300K has been investigated on Si, compensated with S of various concentration. The curves (x)/0 from the uncompensated (with no S) crystals display saturation, in case of S-compensated crystals a maximum is observed. The concentration of free electrons in the uncompensated crystals was found to be independent of pressure. Their mobility decreases to saturate at the pressure of 7108 Pa. In S-compensaled crystals free electron concentration increases with the rise of pressure, their mobility decreases, hence the curves (x)/0 show maximum. The reason for the increase of the concentration of free electrons in S-compensated Si is elucidated.

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