Effect of magnetic Gd impurities on the electrical properties of PbTe single crystals
Том 49 № 4 (2013), Содержание
Том 49 № 4 (2013)

Effect of magnetic Gd impurities on the electrical properties of PbTe single crystals

A. Todosiciuc
Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova
A. Nicorici
Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova
E. Condrea
Institute of Electronic Engineering and Nanotechnologies, Academy of Science of Moldova, Academiei 3/3, MD-2028, Chisinau, Republic of Moldova, International Laboratory of High Magnetic Fields and Low Temperatures, Gajowicka 95, 51-421 Wroclaw, Poland condrea@nano.asm.md, A.Todosiciuc@iieti.asm.md, anicorici@yahoo.com

Аннотация

Under investigation are temperature dependences of electric conductivity, free carrier concentration and mobility in single-crystalline PbTe:Gd samples with varied impurity content. The features of elec- tron transport in PbTe:Gd may be caused by a variable gadolinium valence. The striking result from the Seebeck coefficient measurements is that the thermoelectric power factor increases dramatically. Measurements of the magnetic susceptibility at low temperatures permit us to suggest that Gd ions may exist in different charge states.

Keywords: narrow-gap semiconductors, lead telluride single crystals, rare earths, magnetic suscepti- bility.

УДК 537.312

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