Rezumat
CZU 537.62
DOI https://doi.org/10.52577/eom.2026.62.3.24
This paper studies the structure, magnetic properties, and spin polarization of silicon with manganese introduced by thermal diffusion. Particular attention is paid to the morphological, structural, and magnetic characteristics of the resulting nanostructures, as well as to assessing their potential applications in silicon spintronics. The key magnetic parameters of the magnetic hysteresis loop for Si<B,Mn> samples measured at room temperature (T = 300 K) were determined. One of the key factors influencing the magnetic properties is the concentration and distribution of manganese atoms in the silicon lattice. Under diffusion conditions of T = 1000–1050 °C and t = 60 min, an optimal compromise is achieved between a sufficient Mn penetration depth and the prevention of agglomeration or secondary phase formation. This is in good agreement with existing studies in which ion implantation was used to create similar structures. However, unlike ion implantation, thermal diffusion is a simpler and less destructive method, ensuring better preservation of the silicon crystal lattice without surface amorphization. This is confirmed by AFM data, in which the structure remains largely ordered, without significant amorphous phases. Magnetometric measurements show that Si<B,Mn> samples are capable of retaining ferromagnetic properties at 300 K, making the studied material highly promising for applications in silicon spintronics.
Keywords: silicon, spintronics, diffusion, manganese, ferromagnetism, magnetic hysteresis.