Formation of the Surface Relief on the Nanolayered Ge<sub>5</sub>As<sub >37</sub>S<sub>58</sub>/Se Structure Induced by E-beam Irradiation
Vol. 61 Nr. 2 (2025), Conținut
Vol. 61 Nr. 2 (2025)

Formation of the Surface Relief on the Nanolayered Ge<sub>5</sub>As<sub >37</sub>S<sub>58</sub>/Se Structure Induced by E-beam Irradiation

  • Sergeev S.A.
  • Meshalkin A.Yu.
  • Stronskii A.V.
  • Payuk O.P.
  • Tridukh G.M.
  • Cojocaru I.A.
Sergeev S.A.
Meshalkin A.Yu.
Stronskii A.V.
Payuk O.P.
Tridukh G.M.
Cojocaru I.A.

Rezumat

CZU 621.9.048.7

DOI  DOI https://doi.org/10.52577/eom.2025.61.2.18

 

Electron beam recording of raster images was carried out on the Ge5As37S58/Se nanolayered structure (NLS). The topography of the patterned NLS surface was studied using an atomic force microscope. According to the obtained results, the contribution of the lateral mass transport to the surface relief formation on the NLS was established. The formation of ridge-like lines on the NLS surface under the fast jumping of an electron beam between its targeted locations was revealed.

 

Keywords: electron beam recording, multilayer nanoperiodic structure,  chalcogenide films, surface relief profile.

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