Dielectric Properties of Layered <i>MnGaInSe</i>4</sub><i> Single Crystals in an Alternating Electric Field

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CZU 537.855.621.315.592.3

 

https://doi.org/10.52577/eom.2023.59.2.61

 

The results of the studies of the frequency and  temperature dependences of the dielectric loss tangent, the real and imaginary parts of the permittivity in MnGaInSe4 single crystals in an alternating electric field are  presented. It was found that the main type of dielectric losses in MnGaInSe4 single crystals in the frequency range 8´×103 – 3×´105  Hz are electrical conductivity losses and the conductivity is characterized by the band-hopping mechanism. The activation energies of current carriers of single crystals are determined. It was found that the real and imaginary parts of the permittivity underwent significant dispersion, which was of a relaxation nature.

 

Keywords: MnGaInSe4, alternating current, frequency, dielectric loss, permittivity, zone hopping mechanism, activation energy.

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