Formation of Holes in Semiconductor Materials by Laser Microprocessing

CZU 621.373.826 (075.8)

DOI https://doi.org/10.52577/eom.2022.58.6.73

The process of laser formation of microholes in semiconductor substrates using an EM-4452-1 laser processing unit with a pulse repetition rate of a picosecond laser from 10 to 300 kHz at a radiation energy of up to 10 μJ was investigated. The combination of high-speed movements of the laser beam by the galvanoscanner system and precise positioning of the processed material increases the efficiency of laser microprocessing and expands the functionality of the equipment.

Keywords: laser radiation, holes, semiconductor substrates, microprocessing.