Rezumat
CZU 621.315.592
DOI https://doi.org/10.52577/eom.2022.58.4.46
The authors in the present paper suggest that it is possible to manipulate the state of manganese atoms in the silicon lattice, thus significantly changing the state and character of the magnetic resistance of the studied silicon sample. The authors have been able to determine how magnetic resistance in silicon with a varying number of manganese atoms (single atomic or aggregates) changes as a function of temperature, light, and electric field.
Keywords: magnetoresistance, clusters of manganese atoms, negative magnetoresistance, silicon, conductivity.