Commonality of Kinetics and Mechanisms of Galvanostatic Anodic Oxidation of Silicon, Carbide, and Silicon Nitride

CZU 541.13:621.315.592.3

DOI  https://doi.org/10.5281/zenodo.2629542

It is shown that in the galvanostatic mode of electrolytic anodizing of Si, SiC, and Si₃N₄ the formation of their anodic oxides proceeds with the activation control of the process. It is suggested that the limiting stage of the oxidation process of these materials is the anodic reaction of the formation of intermediate monoxide SiO.

Keywords: anodic oxidation, anodic oxide films, silicon anodizing, silicon carbide anodizing, silicon nitride anodizing.