Effect of Semiconductor Filler and Al Nanoparticles on the Surface Structure and Dielectric Properties of <i>PVDF+TlInS₂&lt;Al&gt;</i>

CZU 538.915

The paper presents the results of a study of the temperature and frequency dependences of a dielectric constant and dielectric loss of PVDF+TlInS₂ and PVDF+TlInS₂+Al compositions in the frequency of 10–10⁵ Hz and the temperature range 20–150°C, respectively. We investigated the effect of Al nanoparticles of 50 nm on the dielectric properties of PVDF+xvol.%TlInS₂ composite materials. It was revealed that the increase in the percentage of the filler TlInS₂ in the matrix leads to an increase of the dielectric constant and of the dielectric loss of these materials. The increase in the dielectric constant and dielectric loss of the PVDF+xvol.% TlInS₂+yvol.%Al composites observed with an increasing content of Al nanoparticles in the composite, resulting in a change in the Maxwell-Wagner volume polarization. It is found that under the influence of Al nanoparticles the nature of the frequency dispersion of the dielectric loss of the studied composites varies considerably.

Keywords: PVDF+xvol.%TlInS₂ and PVDF+xvol.% TlInS₂+yvol.%Al nanocomposites, Al nanoparticles, dielectric constant and dielectric loss.