Self-quenching of Photoconduction in Silicon with Multicharged Clusters of Manganese

CZU 621.315.592

The effect of self-quenching of photoconduction in silicon with multicharged clusters of manganese atoms in the area  hν = 0.4÷0.5 eV is observed. A peculiarity of the observable phenomenon is photoconduction (PC) quenching in the absence of the background or intrinsic light, only if there is IR radiation. The nature of such type of PC quenching is accounted for by both the tunneling of electrons from the cluster energy level and their recombination with holes.

Keywords: silicon, multiply charged nanocluster, self-quenching of photoconduction, manganese, tunneling, IR radiation.