СКОРОСТЬ ПОВЕРХНОСТНОЙ ГЕНЕРАЦИИ НОСИТЕЛЕЙ ЗАРЯДА ПО ГРАНИЦЕ РАЗДЕЛА ПОЛУПРОВОДНИК-СТЕКЛО

Rezumat

It is offered the method for determining of time-dependence of surface generation velocity on semiconductor-dielectric interface. It is shown that surface generation velocity is a time function in MDS-structures of n-Si covered by the lead-boron-silicate glass.

article_16 (Русский)