Rezumat
For the first time is complex (for the first time is methods of radioactive traces and autoradiog- raphy, measuring of conductivity and Hall effect, of an iso-thermal relaxation of capacity and current) the diffusion, solubility and electrical properties gadolinium in silicon is explored at various mediums of annealing and for a wide interval of temperatures (1100-12500С). The diffusion parameters are estab- lished, the solubility and is detected an acceptor nature of explored impurities of gadolinium in silicon.