The Impact of the Discreteness of Low-fluence Ion Beam Processing on the Spatial Architecture of GaN Nanostructures Fabricated by Surface Charge Lithography
Vol. 49 Nr. 1 (2013), Conținut
Vol. 49 Nr. 1 (2013)

The Impact of the Discreteness of Low-fluence Ion Beam Processing on the Spatial Architecture of GaN Nanostructures Fabricated by Surface Charge Lithography

I. M. Tiginyanu
Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Academiei str., 3/3, Chisinau 2028, Moldova
O. Volciuc
Institute of Solid State Physics, University of Bremen, Bremen 28334, Germany
M. A. Stevens-Kalceff
School of Physics, University of New South Wales, Sydney NSW 2052
M. A. Stevens-Kalceff
School of Physics, University of New South Wales, Sydney NSW 2052
V. Popa
National Center for Materials Study and Testing, Technical University of Moldova, 168, Stefan cel Mare Blvd., Chisinau 2004, Moldova, e-mail: popa_sl@yahoo.com
J. Gutowski
Institute of Solid State Physics, University of Bremen, Bremen 28334, Germany
S. Wille
Institute for Materials Science-Functional Materials, University of Kiel, Kiel 24143, Germany
H. Föll
Institute for Materials Science-Functional Materials, University of Kiel, Kiel 24143, Germany

Rezumat

We show that the descrete nature of ion beam processing used as a component in the approach of surface charge lithography leads to spatial modulation of the edges of the GaN nanostructures such as nanobelts and nanoperforated membranes. According to the performed Monte Carlo simulations, the modulation of the nanostructure edges is caused by the stochastic spatial distribution of the radiation defects generated by the impacting ions and related recoils. The obtained results pave the way for di- rect visualization of the networks of radiation defects induced by individual ions impacting a solid- state material.

УДК 538.9

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