Abstract
UDC 621.315.592
DOI https://doi.org/10.52577/eom.2024.60.4.60
The technological regimes of preparation were determined, and ZnIn2S4 thin films were prepared on various orienting and nonorienting substrates – glass, fused silica, vitroceramics, glass covered with SnO2 transparent conductive layers, copper and steel plates, and mica – using the close-spaced vacuum sublimation method. The technological regimes of preparation of thin films of one- and three-packet polytype modifications of ZnIn2S4 (I, III) on glass substrates were found out. The films of the crystallite orientation with (0001) plane parallel to the substrate were obtained. The microstructure of the films was studied for various deposition regimes. The spectra of optical absorption and photoluminescence excitation were analyzed. It was shown that the parameters of the obtained thin films are close to those of ZnIn2S4 single crystals.
Keywords: ZnIn2S4, ternary semiconductors, thin films, close-spaced vacuum sublimation, absorption coefficient, photoluminescence.