Influence of Thermal Treatment on Thermoelectric Figure of Merit of Silicon Doped via Nuclear Transmutation Method
Vol. 56 No. 6 (2020), Content
Vol. 56 No. 6 (2020)

Influence of Thermal Treatment on Thermoelectric Figure of Merit of Silicon Doped via Nuclear Transmutation Method

  • Gaidar G.P.
Gaidar G.P.

Abstract

UDC 621.315.592

 

DOI  https://doi.org/10.5281/zenodo.4299764

 

In this work, the features of the influence of thermal treatment on the electrical and thermoelectric characteristics of silicon crystals doped with a phosphorus impurity by the nuclear transmutation method and (for comparison) by a usual metallurgical method are investigated. It was established that in order to obtain the optimal values of the thermoelectric figure of merit Za in n-Si crystals doped with nuclear transmutation, it is necessary to anneal them at 1100ºC–1200°C for 2 h, whereas for ordinary n-Si crystals, annealing of the same duration should be used, but at a lower temperature. In both cases, higher values of the thermoelectric figure of merit were obtained by cooling the crystals from the annealing temperature up to the ambient one at a rate of 1 C/min.

 

Keywords: silicon, nuclear transmutation, thermal treatment, thermo-emf, thermo-emf anisotropy, thermoelectric figure of merit.

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