Abstract
UDC 621.315.592
DOI https://doi.org/10.5281/zenodo.3747823
The paper reports that silicon with nanoclusters of manganese atoms has unique electrical, photoelectric, magnetic, and photomagnetic properties absent in ordinary doped semiconductor materials. The samples revealed an anomalously high impurity photosensitivity in the region of l = 1–3 μm, a large negative magnetoresistance at room temperature, as well as new thermomagnetic and photomagnetic effects, which were observed in the same sample. Optimal electrophysical parameters of the samples were found. A unique set of observable physical effects allows to create fundamentally new multifunctional sensors of physical quantities based on such materials.
Keywords: silicon, manganese clusters, magnetoresistance, thermomagnetic, photomagnetic, sensors.