Abstract
UDC 621.315.592
DOI https://doi.org/10.5281/zenodo.1053306
The effect of various impurities on the kinetics of electronic processes in n‑Ge(Sb) single crystals was investigated. In the crystals of n‑Ge(Sb+Si) and of germanium doped with the rare earth elements, the substantial decrease of the charge carrier mobility in the region of predominantly impurity scattering (at 77ºK) was established, and the explanation of this effect was given.
Keywords: germanium, impurities, Hall effect, Hall coefficient, charge carrier mobility.