ITO/SiO<SUB>х</sub>/n-Si Photovoltaic Structures with Increased Efficiency
Vol. 52 No. 3 (2016), Content
Vol. 52 No. 3 (2016)

ITO/SiO<SUB>х</sub>/n-Si Photovoltaic Structures with Increased Efficiency

  • Simaschevici A.
  • Serban D.
  • Caraman M.
  • Rusu M.
  • Bruc L.
  • Curmei N.
Simaschevici A.
Serban D.
Caraman M.
Rusu M.
Bruc L.
Curmei N.

Abstract

UDC 621.315

 

The ITO/SiOх/n-Si structures were fabricated by spraying of indium and tin chloride solutions on the surface of (100) silicon wafers with a resistivity of 4.5 Ω×cm. The influence of the Si surface condition on the effectiveness of structures such as photovoltaic cells was investigated. It is shown that structures with an untreated surface of silicon wafers are most efficient. Solar cells on the base of the studied ITO/SiOх/n-Si structures with an inversion layer demonstrate a conversion efficiency close to 16% in the conditions of AM 1.5.

 

Keywords: solar cell, ITO, Si, heterojunction, conversion efficiency.

PDF (Русский)