Abstract
For the first time by methods marked of atoms, autoradiography, isothermal of a relaxation of capacity and current, measurement of conductivity and effect of a Hall established effective a gettering of gold in silicon at joint or consecutive of a diffusion rare-earth of elements of samarium or of gadoli- nium in silicon, in pre-surfaces layers of silicon, where there is an area of high concentration of an ele- ment IIIА of group - samarium and of gadolinium, and also in volume of silicon.