Abstract
In this work the results of investigation of studying profiles of distribution of implanted atom of Mn into Si dipending on the dose of irradiation and temperature of annealing are given by the method RBS. The influence of thermal annealing on the distribution of Mn and other admixtures, in particular, of oxygen is studied. The possibility of using the method of RBS for analysis of both concentrated dis- tribution of alloyed admixtures and the interaction of admixtures between each other is marked.