Abstract
In present work given the experimental results investigation of photo-electric properties and mag- netoresistance single crystals doped by ions manganese by ion implantation method. Implantation of Mn ions polished surface of p-type Si with resistance of ρ=10 Ohm*cm, has been carried out on experimen- tal set-up ILU-3. Ion energy was 40 kEv, implantation dosage was~1016 ion/cm2. Ready plates were cut into samples of 5x3x0,5 mm3 size and placed in quartz ampoules and imposed to annealing at 1000−1200 °C for 1 hour. As a result strongly compensated samples of Si<Mn> both n- and p-type with resistances ρ=102÷105 Ohm*cm have been obtained. Investigation of photo-electric properties and mag- netoresistance of the samples gives the bases to predict that in the samples is formed magnetic clusters such Mn6, Mn12 in the crystal lattice of silicon.