Abstract
The article is devoted to the investigation of molecule formation between impurity atoms of VI group elements (S, Se) and elements of I,II group as well as with elements of transient group, inserted in the crystal lattice of silicon. Thus, molecules being formed, are electrically neutral. Optimal thermodynamic conditions and kinetic of the process of structures’ formation with quantum dots of AIIBVI are described. The possibilities of prospective use of the obtained materials for enhanced solar cells are also described.