Abstract
The results of investigation and research of some particularities of distribution and electro-physical properties of the ion-implanted Mn atoms in silicon as a function of the dose of implantation and the temperature of annealing are presented in the given work. It has been determined that in the process of ther- mal processing of the Mn- ion-implanted silicon samples, complex process of activation of Mn takes place. Meanwhile, the process of Mn activation takes place due to formation of various silicides both on the surface and in the bulk of crystal lattices.
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