Abstract
Work is devoted to the detailed analysis of physical properties of metal semiconductor (MS) with barrier Shottki on InP. On its basis a mechanism of current transport in contacts and the influence of concen- tration of carriers of charge and temperature is established. The substantiation of necessity of application of the model of contacts with a transitive layer for the description of characteristics of MS-structures on InS is given. The new method of manufacturing Au-n-InP Shottki diodes with an intermediate layer can be used for manufacturing (FST) on InP.