Abstract
As a result of study an infrared absorption spectrums of photoresist films, subjected to processing by different types of energy actions, it was established that microwave plasmachemical processing is charac- terized by more considerable structural changes in the material of a photoresist films in comparison with processing in high frequency oxygen discharge or thermic action. These changes can be stipulated by a plu- rality of physical and chemical factors rendering destructive action on a component composition of a film. These factors can be: action of a ultra high frequency field on the film and substrate; thermal action by plas- ma of the discharge; action with a flow of active plasma particles.