Abstract
SiO2-P2O5 films doped with CdSe have been prepared and investigated for temperature sensors appli- cations. The films have been synthesized by sol-gel method, spin coating technique, the deposition be- ing made on glass substrates. The sols have been prepared from tetraethylorthosilicate (TEOS) and phosphoric acid as precursors for SiO2 and P2O5, respectively, together with ethanol and water as reac- tion environment and a hydrolysis reagent, respectively. The films have been deposited at three rota- tion rates: 1000 rpm, 2000 rpm and 3000 rpm, starting on the first day after the sol preparation mo- ment and going on, four days consecutively, and then on the eighth day. We have analyzed the influ- ence of the rotation rate and the time elapsed since the sol preparation till the deposition moment on the structural properties of the doped films. The films deposited at each rotation rate have been an- nealed at 200oC, 300oC, 350oC, 400oC, and 550oC in order to investigate the structural modifications noticed during the formation process of silicophosphate network.
Keywords: FTIR spectroscopy, Raman spectroscopy, sol-gel method, CdSe.
УДК 544.774.2