Abstract
The present work is dedicated to the study of photoelectric properties of the silicon with multiple nanoclusters of manganese atoms. Laws of change of frequency rate of charge state of nanoclusters as a function of Fermi’s level have been determined. It has been demonstrated that in samples with maximal fre- quency rate of charge of nanoclusters, one can witness a row of novel physical phenomena such us: abnor- mally large impurity photoconductivity within the range of 3÷5 micron, gigantic residual conductivity and photoconductivity stimulated by electrical field. In samples with minimal charge state of nanoclusters, one can witness the effect of abnormally deep infrared quenching of photoconductivity, frequency of quenching of which reaches 6÷7 micron. We have determined laws of manipulating of photoelectrical properties of sili- con by means of change of charge state of nanoclusters.