Abstract
Investigations of anisotropy of electric conductivity in the hexagonal crystals of TlInS2, irradiated by gamma-rays are conducted. It is found that at low-dose irradiation (~50 krad) the accumulation of radiation defects takes place in the interlayer space as well as in the plane of layers. This results in decrease of σ⊥С and σС electric conductivity. At high-dose irradiation (more than 200 krad) a formation of complex defects takes place due to the interaction between radiation defects with the original inhomogeneities. As a result, electric conductivity in both directions increases exponentially.