Аннотация
The experimental results of research of photocurrent oscillations in silicon with quantum dots stimu- lated by infra-red light are presented. Is shown, that the large amplitude of oscillations (up to 1 Amper) and ~100 % depth of modulation observable in experiment can not be explained by theory Kalashnikov. For an explanation of observable photocurrent oscillations is used the self-organized quantum dots with anomalous large asymmetric section of capture of charge carriers.