Аннотация
In work are presented the results of studies working out and the creation of thermosensor on the basis of strongly compensated silicon doped with Mn and S. It is stated that thermosensitivity and stability of parameters of worked out thermosensor is high than the existing sensitive thermosensor. It is stated, that thermosensor on the basis of strongly compensated silicon doped with manganese Si<B,Mn> more effectively work in the field of temperature Т=100−400 0К and thermosensor on bass of Si<B,S>, can be successfully used in the field of more high temperature Т=200−450 0К.