Аннотация
Investigation of diffusive properties of Sm and Yb in Si under different mediums and wide tempera- ture intervals (1100−12500C) was performed. Diffusive parameters of Sm and Yb in silicon, it′s acceptor na- ture was determined.
Investigation of diffusive properties of Sm and Yb in Si under different mediums and wide tempera- ture intervals (1100−12500C) was performed. Diffusive parameters of Sm and Yb in silicon, it′s acceptor na- ture was determined.