Аннотация
Influence of ultrasonic waves on adhesive strength of the Au-films to silicon of a n-type with specific resistivity 100200 cm and time of life of carriers 500600 s has been examined at temperature Т = 300 К. It is shown, that the effect of acoustically stimulated of improvement of the ad- hesive of durability of metal semiconductor layer occurs basically at the expense of an increase of concentration ionized impurities under in samples exposed to ultrasound.