Аннотация
The paper reports the results of investigations of chemical processing influence on parameters of Schottky barriers M-InP. The influence was estimated according to CVD and VFD of contacts Аu-n-InP (100) (S = 4,10 2 cm2) formed by the method thermal deposition of Au on substrates n-InP (N = 1018 сm3), 403 423 K. It is shown, that chemical processing is the important factor of control of the superficial proper- ties of InP which effect practically on all parameters of contacts Au-n-InP. At variation of a kind of chemical processing the factor of non-ideality of CVD, Фэф and the voltage of breakdown can change within the lim- б its of 1,06 1,8, 0,35 0,68 eV and 3 10 V, respectively. At the analysis of electric characteristics of con- tacts Au-n-InP it is seen that Schottky barriers received on a surface that was processed in alkaline medium (рН > 7) possess weaker temperature dependence Is . This fact testifies about decreased ФбТ of such contacts.