Аннотация
The generation properties of the silicon – lead-borosilicate glass interface are studied by the method of pulsed MIS capacitor. It was shown that surface generation current nomonotonicly depends on tempera- ture. This nomonotonic dependence may be the result of tunnel and tunnel activated current from traps states in lead-borosilicate glasses localized close to the silicon-glass interface which contributes to the total surface generation current and becomes dominant with decreasing temperature.