Аннотация
In this paper the annealing of the main radiation defects in silicon (A-centers, E-centers, divacancies, etc.) was theoretically described based on the experimental data obtained by many authors. The parameters characterizing this process (activation energies and frequency factors) have been determined and various mechanisms and reactions, which set conditions for annealing of the defects were also proposed.
Метрики
Загрузка метрик ...